Accession Number : AD0163599
Title : Method of Rapidly Detecting Contaminated Semiconductor Surfaces.
Descriptive Note : Patent,
Corporate Author : OFFICE OF THE SECRETARY OF THE ARMY WASHINGTON D C
Personal Author(s) : Glendinning,William B. ; Pharo,Wellington B.
Report Date : 27 JUN 1972
Pagination or Media Count : 2
Abstract : The general object of this invention is to provide a method of rapidly screening semiconductor surfaces for contamination. A further object of the invention is to provide such a method prior to integrated device processing. A particular object of the invention is to provide rapid, nondestructive method for screening a defective silicon substrate surface prior to integrated device processing. It has been found that a rapid, nondestructive method for screening a defective silicon substrate surface can be provided by exposing the substrate surface to a chemical vapor environment of nitric oxide (NO), hydrogen fluoride (HF), and water vapors at about 27 degrees C. to obtain a transparent surface film of about 50 to 100 angstroms in thickness, and then examining the film for surface uniformity and for the presence of geometric shapes.
Descriptors : (*SEMICONDUCTORS, NONDESTRUCTIVE TESTING), (*NONDESTRUCTIVE TESTING, *PATENTS), TEST EQUIPMENT, QUALITY CONTROL, SEMICONDUCTOR DEVICES, SILICON, SURFACES
Subject Categories : Electrical and Electronic Equipment
Test Facilities, Equipment and Methods
Distribution Statement : APPROVED FOR PUBLIC RELEASE