Accession Number : AD0163753

Title :   Method of Making an Insulated Gate Field Effect Device.

Descriptive Note : Patent,

Corporate Author : OFFICE OF THE SECRETARY OF THE ARMY WASHINGTON D C

Personal Author(s) : Glendinning,William B. ; Mark,Albert

Report Date : 21 DEC 1971

Pagination or Media Count : 4

Abstract : The patent describes a vapor etch and epitaxial refill technique for making an insulated gate field effect device. The vapor etch into a first-type conductivity silicon substrate results in an undercutting between windows such that a cavity is developed completely beneath the insulator separating the window regions. The cavity is then refilled epitaxially with silicon of a second conductivity type; a shallow layer of heavily doped silicon of said first-type conductivity epitaxially regrown in the window area; the gate insulator oxide thinned by etching; and gate, source, and drain contacts made.

Descriptors :   (*FIELD EFFECT TRANSISTORS, *PATENTS), (*SEMICONDUCTOR DEVICES, MANUFACTURING), SILICON, EPITAXIAL GROWTH, ETCHING

Subject Categories : Electrical and Electronic Equipment
      Mfg & Industrial Eng & Control of Product Sys

Distribution Statement : APPROVED FOR PUBLIC RELEASE