Accession Number : AD0163753
Title : Method of Making an Insulated Gate Field Effect Device.
Descriptive Note : Patent,
Corporate Author : OFFICE OF THE SECRETARY OF THE ARMY WASHINGTON D C
Personal Author(s) : Glendinning,William B. ; Mark,Albert
Report Date : 21 DEC 1971
Pagination or Media Count : 4
Abstract : The patent describes a vapor etch and epitaxial refill technique for making an insulated gate field effect device. The vapor etch into a first-type conductivity silicon substrate results in an undercutting between windows such that a cavity is developed completely beneath the insulator separating the window regions. The cavity is then refilled epitaxially with silicon of a second conductivity type; a shallow layer of heavily doped silicon of said first-type conductivity epitaxially regrown in the window area; the gate insulator oxide thinned by etching; and gate, source, and drain contacts made.
Descriptors : (*FIELD EFFECT TRANSISTORS, *PATENTS), (*SEMICONDUCTOR DEVICES, MANUFACTURING), SILICON, EPITAXIAL GROWTH, ETCHING
Subject Categories : Electrical and Electronic Equipment
Mfg & Industrial Eng & Control of Product Sys
Distribution Statement : APPROVED FOR PUBLIC RELEASE