Accession Number : AD0163840

Title :   Method of Depositing Isotropic Boron Nitride.

Descriptive Note : Patent,

Corporate Author : OFFICE OF THE SECRETARY OF THE ARMY WASHINGTON D C

Personal Author(s) : Branovich,Louis E. ; Fitzpatrick,William B. P. ; Long,Martin L. , Jr

Report Date : 19 SEP 1972

Pagination or Media Count : 2

Abstract : Chemical vapor deposited isotropic boron nitride is formed on the inner walls of a reaction chamber by forming a vapor mixture of an oxygen containing organic boron compound with ammonia and reacting the vapor mixture in said reaction chamber at about 1100 degrees C. to about 1900 degrees C. at pressures of about one torr to atmospheric.

Descriptors :   (*BORON COMPOUNDS, *VAPOR PLATING), (*PATENTS, VAPOR PLATING), COATINGS, AMMONIA, GRAPHITE

Subject Categories : Coatings, Colorants and Finishes

Distribution Statement : APPROVED FOR PUBLIC RELEASE