Accession Number : AD0163960

Title :   Method of Preparation of Lead Sulfide PN Junction Diodes.

Descriptive Note : Patent,

Corporate Author : DEPARTMENT OF THE NAVY WASHINGTON D C

Personal Author(s) : Schoolar,Richard B.

Report Date : 13 FEB 1973

Pagination or Media Count : 6

Abstract : The patent describes flat, uniform planar diodes of PbS prepared by either (1) epitaxially growing an n-type layer onto a p-type layer by depositing one layer epitaxially onto the other in a vacuum of at least 5 x 10 to the minus 5th power Torr wherein the substrate is at a temperature between 200-350C and the material to be deposited is at a temperature not lower than its sublimation point or (2) epitaxially growing a p-type layer on an n-type layer using the procedure described in (1) with the addition of vapors of a doping agent such as S, Se or Te, in the system. This method may also be applied to the closely related compounds Pb(x)Sn(1-x)Se and Pb(x)Sn(1-x)Te where x varies from 0 to 1 inclusive.

Descriptors :   (*SEMICONDUCTOR DIODES, EPITAXIAL GROWTH), (*PHOTODIODES, *PATENTS), SEMICONDUCTOR DEVICES, LASERS, INFRARED LASERS, LEAD COMPOUNDS, SULFIDES, MANUFACTURING

Subject Categories : Electrooptical and Optoelectronic Devices

Distribution Statement : APPROVED FOR PUBLIC RELEASE