Accession Number : AD0164123
Title : Method of Forming Gallium Phosphide Coatings.
Descriptive Note : Patent,
Corporate Author : DEPARTMENT OF THE NAVY WASHINGTON D C
Personal Author(s) : Davey,John E. ; Pankey,Titus , Jr
Report Date : 12 SEP 1972
Pagination or Media Count : 6
Abstract : The invention embodies the deposition of gallium phosphide films by a four-temperature-zone technique under varying conditions which shifts the optical absorption edge. The gallium phosphide films are deposited onto a substrate held at a particular set temperature during deposition. GaP films deposited with the substrate held at different set temperatures between about 150C and about 425C will possess different absorption curves. Vacuum-annealing such deposited films will further change the absorption edge.
Descriptors : (*Semiconducting films, Vapor plating), (*Patents, Semiconducting films), Gallium compounds, Phosphides, Substrates
Subject Categories : Electrical and Electronic Equipment
Mfg & Industrial Eng & Control of Product Sys
Solid State Physics
Distribution Statement : APPROVED FOR PUBLIC RELEASE