Accession Number : AD0164270
Title : Selective Silicon Groove Etching Using a Tantalum Oxide Mask Formed at Room Temperatures.
Descriptive Note : Patent,
Corporate Author : DEPARTMENT OF THE NAVY WASHINGTON D C
Personal Author(s) : McKelvey,Andrew F.
Report Date : 06 JUL 1971
Pagination or Media Count : 3
Abstract : The invention comprises an improved mask formation technique in a method relating to silicon etching. The improvement involves applying a tantalum layer to a silicon based object, masking the tantalum coated object with light-sensitive materials, chemically removing the exposed portion of tantalum, stripping the remaining light sensitive material, and anodizing the tantalum to the oxide, thus providing an inert tantalum oxide mask of desired configuration in etching the base silicon.
Descriptors : *Integrated circuits, *Etching, *Patents, Silicon, Photomasking, Tantalum compounds, Oxides
Subject Categories : Electrical and Electronic Equipment
Mfg & Industrial Eng & Control of Product Sys
Distribution Statement : APPROVED FOR PUBLIC RELEASE