Accession Number : AD0164363
Title : Process for Forming a P-N Junction in a Semiconductor Material.
Descriptive Note : Patent,
Corporate Author : DEPARTMENT OF THE AIR FORCE WASHINGTON D C
Personal Author(s) : Hill,Bryan H.
Report Date : 28 NOV 1972
Pagination or Media Count : 3
Abstract : The patent relates to a solid body of a first conductivity type which has a passivating oxide layer formed on one of its surfaces. A mask having an opening therein is provided over the layer. The opening is exposed to ion radiation so as to implant ions in the oxide layer. The solid body is heated, thereby driving ion dopants from the oxide layer into the body and providing a region therein having a conductivity opposite the first conductivity type.
Descriptors : *Semiconductor junctions, *Patents, Semiconductor devices, Fabrication, Ion implantation, Thermal diffusion
Subject Categories : Electrical and Electronic Equipment
Distribution Statement : APPROVED FOR PUBLIC RELEASE