Accession Number : AD0164616

Title :   Method and Means for Passivation and Isolation in Semiconductor Devices.

Descriptive Note : Patent Application,

Corporate Author : DEPARTMENT OF THE AIR FORCE WASHINGTON D C

Personal Author(s) : Davies,D. Eirug

Report Date : 25 JUL 1972

Pagination or Media Count : 7

Abstract : In the patent application, the use of ion implantation to offset the effects of doping in semiconductors provides discreet regions of semi-insulated material and reduces the effects of strong bursts of transient radiation.

Descriptors :   *Semiconductor devices, *Transient radiation effects, *Reliability(Electronics), *Ion implantation, Patents, Radiation hardening, Gallium arsenides

Subject Categories : Electrical and Electronic Equipment
      Mfg & Industrial Eng & Control of Product Sys

Distribution Statement : APPROVED FOR PUBLIC RELEASE