Accession Number : AD0164616
Title : Method and Means for Passivation and Isolation in Semiconductor Devices.
Descriptive Note : Patent Application,
Corporate Author : DEPARTMENT OF THE AIR FORCE WASHINGTON D C
Personal Author(s) : Davies,D. Eirug
Report Date : 25 JUL 1972
Pagination or Media Count : 7
Abstract : In the patent application, the use of ion implantation to offset the effects of doping in semiconductors provides discreet regions of semi-insulated material and reduces the effects of strong bursts of transient radiation.
Descriptors : *Semiconductor devices, *Transient radiation effects, *Reliability(Electronics), *Ion implantation, Patents, Radiation hardening, Gallium arsenides
Subject Categories : Electrical and Electronic Equipment
Mfg & Industrial Eng & Control of Product Sys
Distribution Statement : APPROVED FOR PUBLIC RELEASE