Accession Number : AD0164756

Title :   Method of Making Self Aligned Silicon-Gate Transistors.

Descriptive Note : Patent Application,

Corporate Author : DEPARTMENT OF THE AIR FORCE WASHINGTON D C

Personal Author(s) : Ronen,R. S.

Report Date : 17 APR 1974

Pagination or Media Count : 9

Abstract : The patent application concerns a method for fabricating silicon gate field effect transistors by depositing layers of silicon and polycrystalline silicon onto a sapphire or spinel substrate.

Descriptors :   *Field effect transistors, Silicon, Patents, Fabrication

Subject Categories : Electrical and Electronic Equipment

Distribution Statement : APPROVED FOR PUBLIC RELEASE