Accession Number : AD0164936

Title :   High Frequency Field Effect Transistor Switch.

Descriptive Note : Patent,

Corporate Author : DEPARTMENT OF THE NAVY WASHINGTON D C

Personal Author(s) : Hill,Eugene R.

Report Date : 01 MAY 1973

Pagination or Media Count : 8

Abstract : The patent describes an improved field effect transistor (FET) switching circuit for sampling an analog input in response to a control pulse at extremely fast turn-on and turn-off times. The FET operating potential is obtained from a constant voltage source rather than the control signal. A diode is provided between the FET gate and the signal source and also a diode is provided between the FET gate and the control pulse source; the diodes retain sufficient stored charge to completely discharge the FET gate to channel capacitance during switching.

Descriptors :   *Switching circuits, *Patents, Field effect transistors, Data rate

Subject Categories : Electrical and Electronic Equipment

Distribution Statement : APPROVED FOR PUBLIC RELEASE