Accession Number : AD0164936
Title : High Frequency Field Effect Transistor Switch.
Descriptive Note : Patent,
Corporate Author : DEPARTMENT OF THE NAVY WASHINGTON D C
Personal Author(s) : Hill,Eugene R.
Report Date : 01 MAY 1973
Pagination or Media Count : 8
Abstract : The patent describes an improved field effect transistor (FET) switching circuit for sampling an analog input in response to a control pulse at extremely fast turn-on and turn-off times. The FET operating potential is obtained from a constant voltage source rather than the control signal. A diode is provided between the FET gate and the signal source and also a diode is provided between the FET gate and the control pulse source; the diodes retain sufficient stored charge to completely discharge the FET gate to channel capacitance during switching.
Descriptors : *Switching circuits, *Patents, Field effect transistors, Data rate
Subject Categories : Electrical and Electronic Equipment
Distribution Statement : APPROVED FOR PUBLIC RELEASE