Accession Number : AD0248899

Title :   APPLICATIONS OF TUNNELING TO ACTIVE DIODES

Corporate Author : GENERAL ELECTRIC CO SCHENECTADY NY

Personal Author(s) : HALL, R.N.

Report Date : 19 SEP 1960

Pagination or Media Count : 1

Abstract : ELECTRICAL MEASUREMENTS OF GERMANIUM RECRYSTALLIZED FROM IN-GA SOLUTIONS ARE REPORTED. ACCEPTOR CONCENTRATIONS BETWEEN 1 AND 2 X 10 TO THE 20TH POWER/CC ARE FOUND FOR CRYSTALS GROWN FROM IN CONTAINING 0.5 TO 1 WEIGHT PER CENT GA. TUNNEL JUNCTIONS FROM PBTE AND PBS HAVE BEEN PREPARED AND STUDIED. LOW TEMPERATURE ELECTRICAL MEASUREMENTS YIELD VALUES FOR THE LONG WAVELENGTH LONGITUDINAL OPTICAL PHONON ENERGIES IN THESE SEMICONDUCTORS WHICH ARE 16 + OR - 1 AND 27 + OR - 1 MILLI-ELECTRON-VOLTS RESPECTIVELY. AREAS OF INVESTIGATION WHICH ARE STILL IN PROGRESS INCLUDE THE PREPARTION OF CRYSTALS OF THE LEAD SALT SEMICONDUCTORS BY VAPOR PHASE TRANSPORT, MEASUREMENTS OF PHONON AND POLARON PHENOMENA IN THE LOW TEMPERATURE ELECTRICAL CHARACTERISTICS OF TUNNEL JUNCTIONS, THE EFFECT OF LINEAR ELASTIC STRAINS UPON TUNNELING CURRENT COMPONENTS, AND ELASTORESISTANCE MEASUREMENTS ON A VARIETY OF SEMICONDUCTING MATERIALS

Descriptors :   *DIODES, *ELECTRONIC EQUIPMENT, *SPACE CHARGE, *TRANSISTORS, CRYSTALS, DIFFUSION, ELECTRIC FIELDS, SEMICONDUCTORS.

Distribution Statement : APPROVED FOR PUBLIC RELEASE