Accession Number : AD0250299

Title :   STUDY, DEVELOPMENT AND APPLICATION OF TECHNIQUES NECESSARY TO FABRICATE ACTIVE SILICON CARBIDE DEVICES

Corporate Author : WESTINGHOUSE ELECTRIC CORP BOSTON MA STURTEVANT DIV

Personal Author(s) : CHANG, HUNG-CHI ; WALLACE, L. FRANKLIN ; LEMAY, C.Z.

Report Date : 15 OCT 1960

Pagination or Media Count : 1

Abstract : FUNDAMENTAL TECHNIQUES WERE DEVELOPED FOR THE FABRICATION OF SIC DEVICES IN GENERAL AND UNIPOLAR FIELD-EFFECT TRANSISTORS IN PARTICULAR. THE DIFFUSION OF AL VAPOR IN ALPHA-SIC WAS QUANTITATIVELY INVESTIGATED AND THE DIFFUSION-JUNCTION PROCESS WAS DEVELOPED. HEXAGONAL SIC WASGROWN IN THE FORM OF THIN PLATELETS WHICH ARE READY FOR DEVICE FABRICATION. DEVICE FABRICATION PROCESSES INCLUDE THE SINGLE-AND DOUBLE-GATE FUSED JUNCTIONS,SINGLE-GATE GROWN JUNCTIONS, AND SINGLEAND DOUBLE-GATE DIFFUSED JUNCTIONS. ONLY THE DOUBLE-GATE DIFFUSED JUNCTION PROCESS PRODUCED UNIPOLAR TRANSISTORS WHICH EXHIBIT POWER GAIN. THESE DEVICES ARE STILL IN A PRIMITIVE STAGE OF DEVELOPMENT AND WILL REQUIRE FURTHER DEVELOPMENT BEFORE THEY BECOME PRACTICAL DEVICES. AN EXPERI-MENTAL MODEL OF A SIC DOUBLE-GATE UNIPOLAR TRAN-SISTOR WAS DEVELOPED THAT EXHIBITED AC POWER GAIN AS HIGH AS 380 AT ROOM TEMPERATURE AND 7 AT 500 C

Descriptors :   *CRYSTALS, *SILICON COMPOUNDS, *TRANSISTORS, CARBIDES, ELECTRICAL PROPERTIES, GROWTH(PHYSIOLOGY), PROCESSING, SEMICONDUCTORS.

Distribution Statement : APPROVED FOR PUBLIC RELEASE