Accession Number : AD0256012

Title :   SELF DIFFUSION OF LEAD-210 IN SINGLE CRYSTALS OF LEAD SELENIDE

Corporate Author : YALE UNIV NEW HAVEN CONN HAMMOND LAB

Personal Author(s) : SELTZER,MARTIN S. ; WAGNER,J. BRUCE JR.

Report Date : 12 APR 1961

Pagination or Media Count : 1

Abstract : Self diffusion of Pb-210 in PbSe was studied in an inert atmosphere as a function of temperature (over the range 400-800 C) and defect concentration introduced by doping. Diffusion measurements were performed on specimens of p-type PbSe containing 10 to the 18th power holes/cc. and on specimens doped with 1/2 mol-% Bi2Se3 to give n-type material with 5 x 10 to the 19th power electrons/cc or 1/2 mol-% Ag2Se which resulted in p-type material containing 10 to the 19th power holes/cc. Doping with Bi2Se3 decreased diffusivities as compared with undoped PbSe whereas addition of Ag2Se caused diffusion coefficients to be increased. The diffusion activation energies were 0.83, 1.61, and 0.55 ev, for undoped PbSe, bismuth doped PbSe, and silver doped PbSe, respectively. The conclusion was made that Frenkel defects predominate in PbSe and that diffusion of Pb in this compound occurs predominantly by an interstitial mechanism under these conditions. (Author)

Descriptors :   *DIFFUSION, *LEAD(METAL), *LEAD COMPOUNDS, *SELENIDES, *SEMICONDUCTORS, BISMUTH COMPOUNDS, CRYSTAL STRUCTURE, IMPURITIES, MEASUREMENT, RADIOACTIVE ISOTOPES, SINGLE CRYSTALS, TRACER STUDIES

Distribution Statement : APPROVED FOR PUBLIC RELEASE