Accession Number : AD0256262

Title :   RESEARCH ON PROPERTIES OF CLEAN SURFACES

Corporate Author : HONEYWELL RESEARCH CENTER HOPKINS MINN

Personal Author(s) : MORRISON,S.R. ; PALMER,D.R. ; DAUENBAUGH,C.E.

Report Date : MAY 1961

Pagination or Media Count : 1

Abstract : Experiments to determine the surface band structure of clean surfaces produced by cleavage in ultra-high vacuum have been performed on germanium, silicon, and indium antimonide. A clean Ge surface is highly p-type with the Fermi level at the surface near the valence band. This is brought about by acceptor-like surface states in the valence band with a density of 2 to 3 x 10 to the 12th power/sq cm. The density of these low-lying surface states decreases when the surface is exposed to oxygen. A clean Si surface is nearly intrinsic, possibly slightly n-type, indicating that the dominant surface states near the center of the forbidden gap at the surface. Preliminary results on InSb are reported. (Author)

Descriptors :   *SEMICONDUCTORS, *SURFACE PROPERTIES, *SURFACES, ADSORPTION, ANTIMONY ALLOYS, ELECTRICAL PROPERTIES, GERMANIUM, INDIUM COMPOUNDS, INTERMETALLIC COMPOUNDS, MEASUREMENT, OXIDATION, OXYGEN, SILICON

Distribution Statement : APPROVED FOR PUBLIC RELEASE