Accession Number : AD0256340

Title :   THEORETICAL AND EXPERIMENTAL STUDIES CONCERNING RADIATION DAMAGE IN SELECTED COMPOUND SEMI-CONDUCTORS

Corporate Author : BATTELLE MEMORIAL INST COLUMBUS OHIO

Personal Author(s) : AUKERMAN,L.W. ; BAROODY,E.M. ; GRAFT,R.D.

Report Date : 15 MAY 1961

Pagination or Media Count : 1

Abstract : Anomalously low mobilities produced in n-type GaAs as a result of fast-neutron irradiation are interpreted in terms of inhomogenities in the carrier concentration. The very steep temperature dependence of mobility is still a puzzling feature of these irradiations. Annealing of electron-irradiated n-type GaAs can be analyzed in terms of two first-order processes. The first process appears to be independent of the extrinsic properties of the sample. The second process is correlated with the major impurity content or the carrier density. Activation energies for the two processes are respectively, 1.1 + or - 0.08 ev and 1.7 + or - 0.2 ev. (Author)

Descriptors :   *ARSENIDES, *DAMAGE, *RADIATION EFFECTS, *SEMICONDUCTORS, ELECTRICAL CONDUCTIVITY, ELECTRON IRRADIATION, GALLIUM COMPOUNDS, HEAT TREATMENT, NEUTRON REACTIONS, SOLIDS, TEMPERATURE, THEORY

Distribution Statement : APPROVED FOR PUBLIC RELEASE