Accession Number : AD0257311

Title :   A HALL EFFECT MICROWAVE POWER METER

Corporate Author : ROME AIR DEVELOPMENT CENTER GRIFFISS AFB N Y

Personal Author(s) : RUGARI,ANTHONY D.

Report Date : APR 1961

Pagination or Media Count : 1

Abstract : The measurement of Hall voltages at frequencies of 3500 and 9050 mc and its application to the measurement of microwave power is described. The Hall crystals used were fabricated from indium arsenide and indium arsenide phosphide, both members of the semiconductor class knownAS THE INTERMETALLIC COMPOUNDS. These materials were chosen because they possess a large electron mobility at room temperature, and thus exhibit a pronounced Hall effect capability. The results obtained show approximately two orders of magnitude of improvement over other reported work in this area and are believed to be the first reported measurement of a Hall voltage at microwave frequencies using the intermetallic compounds. The design of a Hall effect microwave power meter capable of accurately measuring from 1 to 250 watts of CW power at S-band frequencies is described. (Author)

Descriptors :   *CRYSTALS, *POWER METERS, *RADIOFREQUENCY POWER, *VOLTMETERS, HALL EFFECT, INTERMETALLIC COMPOUNDS, MAGNETIC FIELDS, MATERIALS, MEASUREMENT, MEASURING INSTRUMENTS, MICROWAVE FREQUENCY, S BAND, SEMICONDUCTORS, TRANSMISSION LINES, WAVEGUIDES, X BAND

Distribution Statement : APPROVED FOR PUBLIC RELEASE