Accession Number : AD0257345

Title :   SEMICONDUCTIVE PROPERTIES OF CDS. FORMING, ELECTRON ACTIVATION ENERGY, HALL EFFECT

Corporate Author : LOUVAIN UNIV (BELGIUM)

Personal Author(s) : LUYCKX,A. ; VANDEWAUWER,J. ; COOPMANS,PAUL

Report Date : AUG 1960

Pagination or Media Count : 1

Abstract : Measurements and calculations were made to determine the Hall effect, number of electron carriers, mobility, and energy of activation of electrons for extrinsic and intrinsic conduction for several CdS single crystals activated with In, Ga, Ag. These measurements became possible withA GOOD ACCURACY ONLY AFTER A FORMING WITH HIGH FREQUENCY. Comparison was done between this forming and the well known heating in argon at 850 C. Hall effect measurements were reproducible and gave strait lines with variation of magnetic field or current. Experiments showed that this forming was a volume effect although there was also a surface effect on contacts the extrinsic conduction formular for CdS, Ag, In is presented. Energy of activation was 0,00384 eV for CdS, Ag, In and contacts of Sn. (Author)

Descriptors :   *HALL EFFECT, *INTERMETALLIC COMPOUNDS, *SEMICONDUCTORS, *SINGLE CRYSTALS, ARGON, CADMIUM COMPOUNDS, CATALYSTS, ELECTROMAGNETIC PROPERTIES, ELECTRONS, GROWTH(PHYSIOLOGY), INDIUM, MEASUREMENT, PHOSPHORESCENT MATERIALS, SUBLIMATION, SULFIDES, ZINC COMPOUNDS

Distribution Statement : APPROVED FOR PUBLIC RELEASE