Accession Number : AD0257423

Title :   APPLICATION OF TUNNELING TO ACTIVE DIODES

Corporate Author : GENERAL ELECTRIC CO SYRACUSE N Y

Personal Author(s) : HOLONYAK,N. JR.

Report Date : MAR 1961

Pagination or Media Count : 1

Abstract : A description is given of a simple means of masking against epitax al GaAs crystal growth on a GaAs seed. The properties of manganese-doped GaAs tunnel diodes are described. An allgermanium-doped GaAs tunnel diode and its properties are described. The dependence of hump tunnel currents upon minority carrier injection in a variety of tunnel diodes is outlined. Some of the measured properties of manganese-doped GaAs are presented. (Author)

Descriptors :   *DIODES, ALLOYS, ARSENIDES, CRYSTALS, ELECTRICAL PROPERTIES, ELECTRON TUBES, GALLIUM COMPOUNDS, GERMANIUM, GROWTH(PHYSIOLOGY), IMPURITIES, INTERMETALLIC COMPOUNDS, MANGANESE, MEASUREMENT, NUCLEATION, RELIABILITY, SEMICONDUCTORS

Distribution Statement : APPROVED FOR PUBLIC RELEASE