Accession Number : AD0257488

Title :   PARAMAGNETIC RESONANCE IN SEMICONDUCTORS

Corporate Author : SYRACUSE UNIV N Y

Personal Author(s) : HONIG,A.

Report Date : 29 APR 1961

Pagination or Media Count : 1

Abstract : An extensively referenced summary is presented of research conducted on the following subjects: (1) electron spin - lattice relaxation in silicon, (2) electron spin-spin relaxation in silicon, (3) gamma ray anisotropy from dynamically oriented nuclei, and (4) combined infrared radiation - spin resonance studies. The electron spin-spin relaxation work is presented in some detail. Results from the combined infrared radiation - spin resonance program relate to (1) trapping lifetimes and transport phenomena, (2) conduction electron - phosphorus impurity atom singlet exchange cross section in silicon, (3) photo-induced electron spin - lattice relaxation mechanisms, (4) compensation dependent electron spin - lattice relaxation mechanism, and (5) a metastable photoexcited paramagnetic state in silicon. (Author)

Descriptors :   *CRYSTALS, *PARAMAGNETIC RESONANCE, *SEMICONDUCTORS, CRYSTAL LATTICES, IMPURITIES, INFRARED RADIATION, MAGNETIC FIELDS, MAGNETIC MOMENTS, NUCLEAR MAGNETIC MOMENTS, NUCLEAR SPINS, RELAXATION TIME, SCIENTIFIC RESEARCH, SILICON

Distribution Statement : APPROVED FOR PUBLIC RELEASE