Accession Number : AD0260579

Title :   STUDIES OF MICROPLASMAS AND HIGH-FIELD EFFECTS IN SILICON

Corporate Author : STANFORD UNIV CALIF STANFORD ELECTRONICS LABS

Personal Author(s) : MOLL,J.L. ; SZE,S.

Report Date : 31 MAY 1961

Pagination or Media Count : 1

Abstract : The experimental calibration of the etch rate for boiling-water/HF-dip etching has been carried out by using a microbalance to measure weight loss. This calibration as been used to obtain impurityed report DESCRIPTORS: *Silicon, Plasma physics, Thin films, *Semiconductors, Electric fields, Lat tices, *Photoemission, Electrons, Diffusion, Theory, Photoelectric materials, Photoelectric effects, Mathematical analysis, Tests. The experimental calibration of the etch rate for boiling-water/HF-dip etching has been carried out by using a microbalance to measure weight loss. This calibration as been used to obtain impurity profiles for different layers of about 1000 angstroms depth. Experimental results are reported for electron emission from silicon p-n junctions. The t eoretical form for hot electron distributions for several extreme conditions of mean free path and ionization threshold is derived. (Author 0

Descriptors :   *PHOTOELECTRIC EFFECT, *SEMICONDUCTORS, *SILICON, CRYSTAL LATTICES, DIFFUSION, ELECTRIC FIELDS, ELECTRONS, MATHEMATICAL ANALYSIS, PHOTOELECTRIC MATERIALS, PLASMAS(PHYSICS), TESTS, THEORY, THIN FILMS (STORAGE DEVICES)

Distribution Statement : APPROVED FOR PUBLIC RELEASE