Accession Number : AD0262598

Title :   Final Report,

Corporate Author : WESTINGHOUSE ELECTRIC CORP PITTSBURGH PA

Personal Author(s) : LONGINI,R.I. ; BENNETT,A.I.

Report Date : 07 JUN 1961

Pagination or Media Count : 1

Abstract : Research was concerned with crystal growth mechanisms through the study of dendritic growth in diamond-lattice semiconductors, specifically germanium, silicon, and indium antimonide. Dendrites of these materials grow, in a supercooled melt, as long, narrow ribbons having a central core of twin planes. The ribbon faces can be made to be nearly atomically flat. The process of elongation of the dendrite involves the twinned core structure as a necessary part of the growth. Thickening and widening appear to depend on other growth mechanisms which do not involve the twin planes. The presence of impurities at concentrations of the order of 10 to the 18th power atoms/cc or more affect the growth habit in a fashion not yet quantitatively understood. (Author)

Descriptors :   *CRYSTALS, ANTIMONY ALLOYS, CRYSTAL LATTICES, CRYSTAL STRUCTURE, GERMANIUM, GROWTH(PHYSIOLOGY), IMPURITIES, INDIUM COMPOUNDS, SEMICONDUCTORS, SILICON

Distribution Statement : APPROVED FOR PUBLIC RELEASE