Accession Number : AD0263816

Title :   APPLICATION OF TUNNELING TO ACTIVE DIODES

Corporate Author : GENERAL ELECTRIC CO SYRACUSE N Y

Personal Author(s) : HOLONYAK,N. JR. ; BEVACQUA,S.F.

Report Date : 07 JUL 1961

Pagination or Media Count : 1

Abstract : Hump tunnel currents and associated trapping effects which are observed in GaAs tunnel diodes contaminated with impurities such as Mn, Cu, and Au are described. The relationship of these effects to l/f noise is indicated. Halogen vapor transport and epitaxial growth of GaAs and GaAs space charge limited emission diode are described. The halogen vapor transport, synthesis, and epitaxial growth of GaP on GaP and GaAs is also described. (Author)

Descriptors :   *DIODES, ARSENIDES, COPPER, CRYSTAL LATTICES, CRYSTAL STRUCTURE, CRYSTALS, GALLIUM COMPOUNDS, GOLD, GROWTH(PHYSIOLOGY), HALOGENS, IMPURITIES, MANGANESE, MEASUREMENT, PHOSPHIDES, SPACE CHARGE, SYNTHESIS, VAPORS

Distribution Statement : APPROVED FOR PUBLIC RELEASE