Accession Number : AD0264310

Title :   INVESTIGATION OF SEMICONDUCTING PROPERTIES OF II-VI COMPOUNDS

Corporate Author : GENERAL ELECTRIC CO SCHENECTADY N Y

Personal Author(s) : AVEN,M. ; PIPER,W.W.

Report Date : 01 AUG 1961

Pagination or Media Count : 1

Abstract : The possibility of using Cu or Au as p-type dopants in CdS has been explored. Analytical techniques for determining the amount of total and the approximate proportion of uncompensated Cu in CdS have been developed. Investigation of different methods of producing uncompensated ZnSe has led to a novel technique of producing n-type ZnSe with fairly good transport properties. Structures consisting of epitaxial films of hexagonal n-type CdS on cubic p-type ZnTe single crystals have been studied with respect to their crystallographic and electrical properties. (Author)

Descriptors :   *COPPER, *GOLD, *SEMICONDUCTING FILMS, *SEMICONDUCTORS, *SINGLE CRYSTALS, BROMINE, CADMIUM COMPOUNDS, CRYSTALS, DIFFUSION, ELECTRICAL PROPERTIES, EPITAXIAL GROWTH, GALLIUM, GROWTH(PHYSIOLOGY), HALL EFFECT, IMPURITIES, SELENIDES, SULFIDES, TELLURIDES, VAPOR PLATING, ZINC COMPOUNDS

Distribution Statement : APPROVED FOR PUBLIC RELEASE