Accession Number : AD0264936

Title :   STRUCTURE STUDIES OF IMPERFECTIONS IN CRYSTALS

Corporate Author : ILLINOIS INST OF TECH CHICAGO

Personal Author(s) : AZAROFF,LEONID V.

Report Date : 01 OCT 1961

Pagination or Media Count : 1

Abstract : Two procedures for studying imperfections present in crystals are described. In one, electron density distributions in pure and doto determine the imperfections present. This method was sufficiently sensitive to clearly establish the presence and amount of interstitial zinc atoms in ZnO. This excess zinc atom concentration led to the development of a diffusion theory for binary compounds. The second method makes use of the dynamical theory of x-ray diffraction to interpret intensity variations from single crystals in terms of imperfections ed CdS and ZnO crystals were obtained and their differences used to determine the imperfections present. This method was sufficiently sensitive to clearly establish the presence and amount of interstitial zinc atoms in ZnO. This excess zinc atom concentration led to the development of a diffusion theory for binary compounds. The second method makes use of the dynamical theory of x-ray diffraction to interpret intensity variations from single crystals in terms of imperfections present in such crystals. It has been applied successfully to transistor grade Si crystals. (Author)

Descriptors :   *CRYSTALS, *SINGLE CRYSTALS, ATOMIC STRUCTURE, CADMIUM COMPOUNDS, CRYSTAL STRUCTURE, DETERMINATION, DIFFUSION, IMPURITIES, MOLECULAR STRUCTURE, OXIDES, SILICON, SULFIDES, THEORY, X RAY DIFFRACTION, ZINC, ZINC COMPOUNDS

Distribution Statement : APPROVED FOR PUBLIC RELEASE