Accession Number : AD0265926

Title :   USE OF THE PHOTODIELECTRIC RESPONSE OF SEMICONDUCTORS TO DETECT INFRARED AND VISIBLE RADIATION

Corporate Author : ELECTRONIC MATERIALS RESEARCH LAB UNIV OF TEXAS AUSTIN

Personal Author(s) : HARTWIG,WILLIAM H.

Report Date : MAY 1961

Pagination or Media Count : 1

Abstract : The feasibility of using the photo ielectric re ponse of semiconductors to detect infrared and visible radiation is shown to depend upon purity, temperature, and the frequency when the photodielectric behavior of the material is acting to change the field configuration in a resonant cavity. The frequency dependence of a reentrant coaxial cavity upon the physical properties of a terminating disc is derived using the perturbation equation. Semiconductors possess both dielectric and conductive properties which depend, in part, upon the density of free carriers. An equation relating the dielectric constant of semiconductors to the physical properties is derived. Photodielectric effects are treated theoretically to determine the minimum radiant spectral flux density required to generate an electron-hole pair density equal to the thermal carrier density. The results o the research show no improvement over photovoltaic detection with materials presently available. (Author)

Descriptors :   *CAVITY RESONATORS, *INFRARED DETECTORS, *SEMICONDUCTORS, DETECTION, DETECTORS, DIELECTRIC PROPERTIES, DIELECTRICS, ELECTRIC FIELDS, FEASIBILITY STUDIES, FREQUENCY SHIFT, INFRARED PHOTOCONDUCTORS, INFRARED RADIATION, INSTRUMENTATION, LIGHT, MATERIALS, MEASUREMENT, PERTURBATION THEORY, PHOTOCONDUCTIVITY, PHOTOSENSITIVITY, PHYSICAL PROPERTIES, REFRACTOMETERS, SENSITIVITY, THEORY

Distribution Statement : APPROVED FOR PUBLIC RELEASE