Accession Number : AD0266021

Title :   HIGH-TEMPERATURE BROAD-BAND SEMICONDUCTORS

Corporate Author : POLYTECHNIC INST OF BROOKLYN N Y

Personal Author(s) : MILLER,P.H. JR.

Report Date : 16 AUG 1961

Pagination or Media Count : 1

Abstract : Efforts were co tinued on the study and development of ne semiconductor materials for the direct conversion of heat to electricity in the temperature range above 800 K. Th major ork was on rare earth sulphid s with the Th3P4 deficiency s ruc ure. ( uthor)

Descriptors :   *RARE EARTH COMPOUNDS, *SEMICONDUCTORS, BARIUM, BROADBAND, CERIUM COMPOUNDS, HIGH TEMPERATURE, IMPURITIES, PHOSPHIDES, PRASEODYMIUM COMPOUNDS, SULFIDES, THORIUM COMPOUNDS

Distribution Statement : APPROVED FOR PUBLIC RELEASE