Accession Number : AD0266456

Title :   THEORETICAL AND EXPERIMENTAL STUDIES CONCERNING RADIATION DAMAGE IN SELECTED COMPOUND SEMICONDUCTORS

Corporate Author : BATTELLE MEMORIAL INST COLUMBUS OHIO

Personal Author(s) : AUKERMAN,L.W. ; BAROODY,E.M.

Report Date : 15 NOV 1961

Pagination or Media Count : 1

Abstract : ISOTHERMAL ANNEALING EXPERIMENTS ON NEUTRON-IRRADIATED N-TYPE GaAs were analyzed in terms of two independent monomolecular processes. Since a similar behavior was observed in electron-irradiated GaAs, direct comparisons were made between the two types of damage. Isochronal annealing studies on neutron-irradiated n-type InP indicate that this material may have a more complex direct structure than does GaAs when irradiated at or near room temperature. Opticaltransmission data obtained from neutron-irradiated GaAs, CdT E, AND CdS are discussed in terms of a model in which the damaged sites consist of localized regions of a different phase. (Author)

Descriptors :   *ARSENIDES, *ELECTRON IRRADIATION, *FAST NEUTRONS, *NEUTRON REACTIONS, *PHOSPHIDES, *DAMAGE, *RADIATION EFFECTS, *SEMICONDUCTORS, *SULFIDES, *TELLURIDES, ABSORPTION, CADMIUM COMPOUNDS, EXPERIMENTAL DATA, GALLIUM COMPOUNDS, HEAT TREATMENT, INDIUM COMPOUNDS, OPTICS, THEORY

Distribution Statement : APPROVED FOR PUBLIC RELEASE