Accession Number : AD0267248

Title :   STRUCTURAL IMPERFECTIONS IN SILICON P-N JUNCTIONS

Corporate Author : SHOCKLEY TRANSISTOR DIV CLEVITE TRANSISTOR MOUNTAIN VIEW CALIF

Personal Author(s) : GOETZBERGER,A. ; QUEISSER,H.

Report Date : 31 AUG 1961

Pagination or Media Count : 1

Abstract : Four areas of investigation were completed. A study was made of a technique for measurement of the depth of diffused layers in silicon by a grooving method reported here in detail for the first time. An application is described of the anodic sectioning technique to the measurement of impurity distribution in thin diffused layers. The second area covers investigation of the structure of small angle grain boundaries in silicon and their effect on the diffusion of doping agents. Diffusion-induced slip in silicon appears to be caused by the diffusion of small substitutional atoms of the doping agent, such as boron, which create mechanical stresses within the heavily doped surface region of the silicon. This stress is apparently relieved by formation of dislocation arrays which become visible upon etching of the surface. A study was also made which was supported only in part under this contract covering impurity induced pipes through diffused layers in silicon. (Author)

Descriptors :   CRYSTAL LATTICES, CRYSTAL STRUCTURE, DIFFUSION, DISTRIBUTION, GROWTH(PHYSIOLOGY), IMPURITIES, PROCESSING, SILICON, SURFACE PROPERTIES, TRANSISTORS

Distribution Statement : APPROVED FOR PUBLIC RELEASE