Accession Number : AD0270133

Title :   INDUSTRIAL PREPAREDNESS STUDY ON SILICON DIFFUSED JUNCTION TRANSISTORS NPN DEVICES 13, 14, 15 AND PNP DEVICES 13 AND 14, VOLUME I

Corporate Author : RADIO CORP OF AMERICA SOMERVILLE N J

Personal Author(s) : SAWYER,F. ; BALENTS,L.

Report Date : 30 JUN 1961

Pagination or Media Count : 1

Abstract : Manufacturing methods and processing techniques are presented for NPN and PNP versions of diffused junction type transistors designed for operation as follows: (1) device 13 NPN and PNP medium power dc-to-dc converter, inverter, chopper, voltage and current regulator, dc and servo amplifier, relay and solenoid-actuating circuits; (2) device 14 NPN and PNP intermediate power dc-to-dc converter, inverter, chopper, voltage and current-regulator, dc and servo amplifier, relay and solenoid-actuating circuits; and (3) device 15 NPN high power dc-to-dc converter, inverter, chopper, voltage and current regulator, dc and servo amplifier, relay and solenoidactuating circuits. The NPN structure is of the etched mesa type, the PNP structure is of the etched well type. (Author)

Descriptors :   *MANUFACTURING, *TRANSISTOR AMPLIFIERS, *TRANSISTORS, BORON, PHOSPHORUS, POWER AMPLIFIERS, PROCESSING, PRODUCTION, SILICON

Distribution Statement : APPROVED FOR PUBLIC RELEASE