Accession Number : AD0270134

Title :   INDUSTRIAL PREPAREDNESS STUDY ON SILICON DIFFUSED JUNCTION TRANSISTORS NPN DEVICES 13, 14, 15 AND PNP DEVICES 13 AND 14, VOLUME II, BOOK 1

Descriptive Note : Final rept., 26 Jun 56-30 Jun 61

Corporate Author : RADIO CORP OF AMERICA SOMERVILLE N J

Personal Author(s) : SAWYER,F. ; BALENTS,L.

Report Date : 30 JUN 1961

Pagination or Media Count : 158

Abstract : Devices 13, 14, and 15 are discussed. Silicon power transistors were intended for a wide variety of applications in the temperature range -65 C to +175 C. They are particularly useful in power switching circuits, oscillator, regulator, and pulse amplifier circuits, and as class A and B push-pull audio and servo amplifiers. They feature extremely low saturation resistance, high current and power dissipation ratings, high beta at high current, and excellent high temperature performance up to +175 C. Detailed specifications and manufacturing processes used in the production of these transistors are described. (Author)

Descriptors :   *TRANSISTOR AMPLIFIERS, *TRANSISTORS, MANUFACTURING, POWER AMPLIFIERS, PROCESSING, PRODUCTION, SILICON, TEST METHODS

Distribution Statement : APPROVED FOR PUBLIC RELEASE