Accession Number : AD0271586

Title :   ETCHING OF HIGH PURITY ZINC

Corporate Author : CALIFORNIA INST OF TECH PASADENA W M KECK LAB OF ENGINEERING MATERIALS

Personal Author(s) : BRANDT,R.C. ; ADAMS,K.H. ; VREELAND,T. JR.

Report Date : DEC 1961

Pagination or Media Count : 1

Abstract : An etching technique for revealing dislocations in high purity Zn single crystals without the addition of solute impurities was developed. The technique involves surface doping prior to chemical polishing. Evidence for a one to one correspondence between etch figures and dislocations is presented, together with some preliminary observations of slip on (0001) basal and (1212) pyramidal planes and twinning in Zn. (Author)

Descriptors :   *SINGLE CRYSTALS, *ZINC, CRYSTAL LATTICES, CRYSTAL STRUCTURE, DEFORMATION, ELECTROLYTIC POLISHING, GROWTH(PHYSIOLOGY), METAL CRYSTALS, MICROSTRUCTURE, PREPARATION, PURIFICATION, SOLUTIONS(MIXTURES)

Distribution Statement : APPROVED FOR PUBLIC RELEASE