Accession Number : AD0272775

Title :   RESEARCH IN ELECTRON EMISSION FROM SEMICONDUCTORS

Corporate Author : DAVID SARNOFF RESEARCH CENTER PRINCETON N J

Personal Author(s) : SIMON,R.E. ; GATCHELL,E.K.

Report Date : 31 DEC 1961

Pagination or Media Count : 1

Abstract : Progress is reported in the preparation and evaluation of large area hot electron emitters of silicon. Diffusion techniques were used to prepare p-n junction emitters with n-regions 500-1000 Angstroms thick. Surface conductance, luminescence, and electron emission were used to evaluate the devices. A correlation was observed between emission and luminescence. However, large emission currents were not observed because of the high electron affinity of these devices. Measurements were made which indicate that argon-bombardment may be useful for producing a favorable surface and for reducing the thickness of the surface n-region. Measurements of the sticking coefficient of cesium on tungsten are reported. (Author)

Descriptors :   *PHOTOELECTRIC EFFECT, *SEMICONDUCTORS, *THERMIONIC EMISSION, ARGON, CESIUM, CRYSTAL STRUCTURE, CRYSTALS, DIFFUSION, ELECTRICAL CONDUCTIVITY, FIELD EMISSION, LUMINESCENCE, MEASUREMENT, PREPARATION, PROCESSING, SILICON, SURFACE PROPERTIES, SURFACES, THICKNESS, TUNGSTEN

Distribution Statement : APPROVED FOR PUBLIC RELEASE