Accession Number : AD0274848

Title :   THE INFLUENCE OF POINT DEFECTS ON THE KINETICS OF DISSOLUTION OF SEMICONDUCTORS

Corporate Author : YALE UNIV NEW HAVEN CONN HAMMOND LAB

Personal Author(s) : SIMKOVICH,GEORGE ; WAGNER,J. BRUCE JR.

Report Date : 15 JAN 1952

Pagination or Media Count : 1

Abstract : The kinetics of dissolution of semiconductors as a function of point defects introduced by varying the stoichiometry and/or by doping additions have been studied. Experiments on two ionic semiconductors, lead sulfide and zinc oxide, are described. Under conditions involving a relatively large change in the oxidation states of the constituents in the solid-liquid reaction, the kinetics have been shown to vary markedly with point defect concentration. Preliminary results of other investigations under this contract are also mentioned. (Author)

Descriptors :   *KINETIC THEORY, *SEMICONDUCTORS, ALUMINUM COMPOUNDS, BISMUTH COMPOUNDS, CHEMICAL REACTIONS, HYDROCHLORIC ACID, LEAD COMPOUNDS, LITHIUM COMPOUNDS, NICKEL COMPOUNDS, NITRIC ACID, OXIDES, SILVER COMPOUNDS, SOLUTIONS(MIXTURES), SULFIDES, ZINC COMPOUNDS

Distribution Statement : APPROVED FOR PUBLIC RELEASE