Accession Number : AD0275847

Title :   SINGLE CRYSTAL SILICON OVERGROWTHS

Corporate Author : ARMY ELECTRONICS LABS FORT MONMOUTH N J

Personal Author(s) : MARK,ALBERT

Report Date : JAN 1962

Pagination or Media Count : 1

Abstract : The pyrolytic process for the vapor phase deposition of single crystal silicon overgrowths on parent substrates is described. This method utilizes the dissociation of SiCl4 by H in an open tube flow process. Free energy and vapor pressure data are, showing the dissociation relationship between these reacting species for junction formation. Photographs indicate the dependence on temperature of the Si morphologies that deposit on the substrates, other variables being held constant. Because of the low thermal conductivity of silicon, emphasis is placed on direct contact heating of the silicon substrates to control overgrowth quality. (Author)

Descriptors :   *SILICON, *SINGLE CRYSTALS, *VAPOR PLATING, CHLORIDES, DEPOSITS, EPITAXIAL GROWTH, GROWTH(PHYSIOLOGY), SILICON COMPOUNDS, TEMPERATURE CONTROL, VAPORS

Distribution Statement : APPROVED FOR PUBLIC RELEASE