Accession Number : AD0276000

Title :   SEMICONDUCTOR MATERIALS

Corporate Author : AIR FORCE CAMBRIDGE RESEARCH LABS L G HANSCOM FIELD MASS

Personal Author(s) : JOHNSON,A.D.

Report Date : JAN 1962

Pagination or Media Count : 1

Abstract : The future materials problems should see increased efforts on techniques for tailor-making semiconductors for certain desir prop r ies. Mixi g of miscible compounds appears promising in this respect. Epit xi l vapor grow h techniques also warrant further exploitation. Other approaches for specific applications are expected to be emphasized, such as mixed valency semiconductors for high temp rature thermoelectric elements. Theoretical a vances are expected in terms of nergy band structure based on cyclotron resonance and related measurements. Investiga ions will continue to be based on the role of imp rf ctions i e icon uctor uthor)

Descriptors :   *SEMICONDUCTORS, CHEMICAL PROPERTIES, EPITAXIAL GROWTH, GROWTH(PHYSIOLOGY), MATERIALS, PHYSICAL PROPERTIES, PRODUCTION, SOLID STATE PHYSICS, THEORY

Distribution Statement : APPROVED FOR PUBLIC RELEASE