Accession Number : AD0281736
Title : HOT CARRIER PHENOMENA IN SEMICONDUCTORS AT MICROWAVE FREQUENCIES.
Descriptive Note : Quarterly rept. no. 4, 15 Feb-15 May 62,
Corporate Author : GENERAL TELEPHONE AND ELECTRONICS LABS INC BAYSIDE N Y
Personal Author(s) : Fowler,Vernon J.
Report Date : 30 JUN 1962
Pagination or Media Count : 35
Abstract : Measurements of recombination in Cu- and Ni- doped Ge, using contact injection, were made and corrected for surface recombination. The data for Ge:Ni at room and dry ice temps. are similar; for Ge:Cu they are different in that lifetime first increases with field, then decreases at the low temp. Throughout this temp. range, the following appear to be established; (1) the electron capture cross section for neutral Ni and neutral Cu decreases rapidly with electron speed; and (2) for Cu(-) it is essentially independent of speed. The difference in speed-dependence of neutral and negatively-charged centers seems attributable to the Coulomb barrier of the latter. Complex conductivities of n-Ge are reported for 3 samples in different orientations and comparable dc resistivites at 78k. For n-InSb at 78k, large negative values of dielectric constant were found. (Author)
Descriptors : *GERMANIUM, *MICROWAVE EQUIPMENT, *SALICYLIC ACIDS, ANTIMONY ALLOYS, COPPER, DIELECTRIC PROPERTIES, DIFFUSION, ELECTRIC FIELDS, ELECTRICAL CONDUCTIVITY, ELECTRICAL PROPERTIES, ELECTRON CAPTURE, ELECTRONS, IMPURITIES, INDIUM COMPOUNDS, IONS, MICROWAVE FREQUENCY, NICKEL, RECOMBINATION REACTIONS, TEMPERATURE
Distribution Statement : APPROVED FOR PUBLIC RELEASE