Accession Number : AD0281796

Title :   SEMICONDUCTOR DIODE PERFORMANCE IN NUCLEAR RADIATION ENVIRONMENTS.

Descriptive Note : Final rept. 15 Apr 60-15 Aug 61 on ANP Airframe and Jet Oil Support,

Corporate Author : ARMOUR RESEARCH FOUNDATION CHICAGO ILL

Personal Author(s) : Hamre ,Harlan G. ; Barrell ,Raymond C. ; McElroy,William N.

Report Date : MAY 1962

Pagination or Media Count : 80

Abstract : Performance characteristics were determined for two types of general purpose diodes, and for five types of microwave diodes, in radiation environments equivalent to at least 1000 hours' exposure to 10 to the 10th neutron/sq cm-sec and 2 times 10 to the 5th Rad/hour. None of the units studied showed satisfactory performance characteristics after this exposure, although the germanium 1N263 point-contact diode was degraded less than others investigated, and still exhibited measurable properties following the exposure. Results, although not conclusive, seem to indicate that energizing the microwave mixers at X-band (9375 Mc) during radiation is helpful in prolonging the life of the units. (Author)

Descriptors :   *DIODES, FAST NEUTRONS, INSTRUMENTATION, MICROWAVE EQUIPMENT, DAMAGE, RADIATION EFFECTS, TESTS

Distribution Statement : APPROVED FOR PUBLIC RELEASE