Accession Number : AD0281810

Title :   LOW POWER THIN MAGNETIC FILM MEMORY.

Descriptive Note : Interim engineering rept. no. 1, 5 Apr-5 Jul 62,

Corporate Author : REMINGTON RAND UNIVAC DIV SPERRY RAND CORP PHILADELPHIA PA

Personal Author(s) : Matcovich,T. J.

Report Date : 05 JUL 1962

Pagination or Media Count : 14

Abstract : A substantial reduction in Hk was achieved by using Ni-Fe-Mo alloys. These alloys are electroplated directly onto 26-mil-thick copper substrates. Several multilayer evaporated circuits were deposited over the magnetic film. Difficulty was experienced with making good SiO insulating layers, but a solution to this problem has been found. Difficulty is still being experienced with making low resistivity conductors. The drive wires used are 0.020 inches wide. Equipment is being constructed for the evaporation of 0.005 inch drive wires. Spring loaded contacts from diode clips are being used to make contact to the plated wires. A technique was developed to cancel the unwanted signal capacitively coupled from the drive to the sense line. A single bit element was operated with a drive current of 140 mA, and gave an output signal of 0.4 mV with a signal to noise ratio of 4:1. Some samples have been prepared with evaporated digit lines. (Author)

Descriptors :   *MEMORY DEVICES, *DATA STORAGE SYSTEMS, *METAL FILMS, *THIN FILMS (STORAGE DEVICES), CHROMIUM ALLOYS, COPPER, ELECTRIC INSULATION, GOLD ALLOYS, IRON ALLOYS, MOLYBDENUM ALLOYS, MONOXIDES, NICKEL ALLOYS, SILICON COMPOUNDS

Distribution Statement : APPROVED FOR PUBLIC RELEASE