Accession Number : AD0281841

Title :   NUCLEAR RADIATION DAMAGE TO TRANSISTORS. VOLUME II. PERMANENT DAMAGE. PART 1. THEORETICAL ASPECTS,

Corporate Author : HARRY DIAMOND LABS WASHINGTON D C

Personal Author(s) : Cooper ,Martin J. ; Payne,M. Gay

Report Date : 30 JUN 1962

Pagination or Media Count : 33

Abstract : A mathematical analysis of neutron damage to transistors is presented. The approach involves statistical considerations of the variation of minority carrier lifetime tau thereby providing a direct calculation of the damage factor K, previously considered an empirical constant. It is thus possible to calculate the change of common-emitter current gain beta and collector leakage current (Ico) due to neutron exposure. Calculations agree reasonably well with experimental observations. (Author)

Descriptors :   *TRANSISTORS, GERMANIUM, NEUTRONS, DAMAGE, RADIATION EFFECTS, SILICON

Distribution Statement : APPROVED FOR PUBLIC RELEASE