Accession Number : AD0282103

Title :   EFFECT OF LIGHT ON MECHANICAL PROPERTIES OF SEMI-CONDUCTORS.

Descriptive Note : Final rept. Sep 58-Aug 60.

Corporate Author : NOTRE DAME UNIV IND

Personal Author(s) : Kuczynski,George C.

Report Date : MAY 1962

Pagination or Media Count : 14

Abstract : A resume of knowledge concerning the photomechanical effect to mid-1961 is presented. Efforts were exerted towards identification of the effects in other semiconductors. It was found that it occurs in InSb, InSe and InAs. In addition, an effort was made to detect any plastic deformation during bending of Ge and Si plates under illumination. A series of experiments were designed to detect any effect of oxidation upon fracture stress and hardness of Si crystals; none was observed. However, the fracture characteristics were very sensitive to fracture stress. Up to about 200 Kg/sq-mm, the Si plates fractured into several large crystal chunks; above this stress they were pulverized during fracture. Illumination with UV X-ray radiation had no effect upon this phenomenon. (Author)

Descriptors :   *INTERMETALLIC COMPOUNDS, *SEMICONDUCTORS, ANTIMONY ALLOYS, ARSENIDES, GERMANIUM, INDIUM COMPOUNDS, LIGHT, PHOTOCHEMICAL REACTIONS, PHOTOSENSITIVITY, PLASTIC PROPERTIES, SELENIDES, SILICON

Distribution Statement : APPROVED FOR PUBLIC RELEASE