Accession Number : AD0282112
Title : DEVELOPMENT OF SILICON POWER TRANSISTORS.
Descriptive Note : Final rept. 10 Jun 60-30 Jun 62,
Corporate Author : RADIO CORP OF AMERICA SOMERVILLE N J
Personal Author(s) : O'Brien ,J. ; Leotti,A. L.
Report Date : 30 JUN 1962
Pagination or Media Count : 87
Abstract : The NPIN structure was selected for the final fabrication of silicon power transistors. A discussion of the desired electrical parameters and their relationship to the physical structure of the device provides some of the necessary design criteria. Interdigitated or comb-type structures were evaluated to determine the optimum configuration for the current requirements. Photographs of the device are included to emphasize the product, as it is processed through each fabrication operation. Secondary breakdown of the device is discussed. Power dissipation measurements of final devices are included to show the device parameters obtained under normal circuit operation. (Author)
Descriptors : (*TRANSISTORS, MANUFACTURING), SEMICONDUCTORS, DIFFUSION, VAPORS, BONDING, SILICON
Distribution Statement : APPROVED FOR PUBLIC RELEASE