Accession Number : AD0282249

Title :   INVESTIGATION AND DEVELOPMENT IN THE AREA OF EPITAXIAL GROWTH TECHNIQUES.

Descriptive Note : Final rept., 1 Jun 61-1 Jun 62,

Corporate Author : SYLVANIA ELECTRIC PRODUCTS INC WOBURN MASS

Personal Author(s) : Wang ,P. ; Sils ,V. ; Berkstresser,R.

Report Date : 01 JUN 1962

Pagination or Media Count : 42

Abstract : Epitaxial growth techniques are investigated. A technique using phosphorous diffusion for determination of P-type epitaxial layer doping impurity profiles was developed. Detailed analyses of doping impurity transitions in both N and P type epitaxial layers were made. The contribution of various possible doping sources was investigated and means for reducing the system and substrate doping effect suggested. The use of phosphine doped argon for controlling resistivity of an N-type epitaxial layer has been successfully demonstrated. The technique of growing multi-epitaxial layer structures combined with effective oxide masking was demonstrated in the fabrication of PNPN four-layer switches with oxide masked overgrowth. (Author)

Descriptors :   *DIODES, *SEMICONDUCTORS, *SINGLE CRYSTALS, ARGON, CONTROL, CRYSTAL LATTICES, DECOMPOSITION, DEPOSITS, DETERMINATION, DIFFUSION, DISTRIBUTION, ELECTRICAL PROPERTIES, EPITAXIAL GROWTH, IMPURITIES, INFRARED SPECTROSCOPY, MEASUREMENT, OXIDES, PHOSPHORUS, SILICON, THICKNESS, THIN FILMS (STORAGE DEVICES), VAPORS

Distribution Statement : APPROVED FOR PUBLIC RELEASE