Accession Number : AD0282270

Title :   Polycrystalline Negative Resistance Devices.

Descriptive Note : Final engineering rept. 16 Dec 60-31 Dec 61.

Corporate Author : TRIONICS CORP MADISON WIS

Report Date : 31 DEC 1961

Pagination or Media Count : 147

Abstract : Electrical characteristics and effects of variations in processing conditions were studied for negative resistance elements (Negistors) formed in polycrystalline ceramic matrices by a controlled electroprocessing technique. Most work was done with polycrystalline nickel ferrite, but single-crystal ferrite, oxide, and titanate matrices were also considered. The elements formed by electroprocessing consisted of a microscopic conductive path through the body of the matrix material. The principal mechanism responsible for the negative resistance characteristic of Negistors was found to be a thermal effect. Resistance heating of the electroprocessed path in the elements combined with a high negative temperature coefficient of resistance of the path above about 200 C results in the negative resistance. P-n junctions and both n+-n and thermal negative resistance elements were produced in silicon by an electrodoping process which is a modification of the electroprocessing technique used for forming Negistors. Unusual electrical switching characteristics were observed in nickel oxide elements. These elements switch between high- and low-resistivity states on application of suitable pulse voltages. (Author)

Descriptors :   *CERAMIC MATERIALS, *NEGATIVE RESISTANCE CIRCUITS, CRYSTALS, FERRITES, NICKEL COMPOUNDS, OXIDES, SEMICONDUCTORS, SILICON, SINGLE CRYSTALS, TEST EQUIPMENT, TEST METHODS

Distribution Statement : APPROVED FOR PUBLIC RELEASE