Accession Number : AD0282314

Title :   SEMICONDUCTOR SURFACE PASSIVATION PRODUCTION REFINEMENT PROGRAM

Descriptive Note : Quarterly rept. no. 4, 1 Jan-31 Mar 62,

Corporate Author : MOTOROLA INC PHOENIX ARIZ

Personal Author(s) : BELL,H.B. ; COOPER,H.W.

Report Date : 31 MAR 1962

Pagination or Media Count : 32

Abstract : Experiments and the resultant data on low temperature, lead glass passivation of the star transistor are reported. Production has instituted several changes in the processing of the star planar. Notable among these is the change from Al contacts and Ag wires to Au contacts and Au wires and changes in the base diffusion sheet resistivity. Recent major efforts on the low temperature passivation have revolved about the areas of pre-glassing cleanup, etching, solutions, and the developing of processing conditions necessary to evaluate the emitter diffused wafers after Pb glass passivation. The first experiment on the effects of etching time versus the electrical parameters showed significant differences in the values of h sub FE. The etchant used was 150 parts HNO3 to 1 part HF. (Author)

Descriptors :   *DIODES, *RECTIFIERS, *SEMICONDUCTORS, *TRANSISTORS, ACIDS, AGING (PHYSIOLOGY), ALLOYS, AMMONIUM COMPOUNDS, DIFFUSION, ELECTROPLATING, EVAPORATION, FLUORIDES, GLASS, GOLD, LEAD(METAL), LOW TEMPERATURE RESEARCH, MANUFACTURING, MOLDINGS, NICKEL, NITRIC ACID, OXIDES, PLASTICS, PLATINUM, RELIABILITY, SILICATES, SILICON, SILVER, SOLDERING, STABILITY, SURFACE PROPERTIES, SURFACES, TESTS

Distribution Statement : APPROVED FOR PUBLIC RELEASE