Accession Number : AD0282526

Title :   RESEARCH ON CDTE

Corporate Author : GENERAL ELECTRIC CO SCHENECTADY N Y

Personal Author(s) : HALSTED,R.E. ; LORENZ,M.R.

Report Date : 31 JUL 1962

Pagination or Media Count : 1

Abstract : Electrical transport and optical properties of CdTe crystals were studied. Electron mobilities up to 50,000 sq cm/volt were measured. Results were interpreted with regard to scattering mechanism on the assumption of a single donor level. Magnetoresistance measurements were initiated and IR reflectance data obtained on some n-type doped samples. The electron effective mass was determined as 0.12 + or - 0.02. Both n-type and p-type CdTe single crystals were prepared from the melt. Hole mobility data were explained by optical-mode scattering with some contribution from impurity and/or acousticalmode scattering. Carrier concentration as a function of temperature is presented for several zone-refined, undoped samples and for impuritydoped samples.

Descriptors :   *CADMIUM COMPOUNDS, *INTERMETALLIC COMPOUNDS, *SEMICONDUCTORS, *SINGLE CRYSTALS, *TELLURIDES, CHROMATES, ELECTRODES, ENERGY, FLUORIDES, HYDROGEN, IMPURITIES, INDIUM, INFRARED RADIATION, IONIZATION, MAGNETIC FIELDS, NITRIC ACID, OPTICS, PLATINUM, POTASSIUM COMPOUNDS, REFLECTION, RESISTANCE (ELECTRICAL), SULFURIC ACID, TRANSPORT PROPERTIES, ZONE MELTING

Distribution Statement : APPROVED FOR PUBLIC RELEASE