Accession Number : AD0282527

Title :   INVESTIGATION OF SEMICONDUCTING PROPERTIES OF II-VI COMPOUNDS

Corporate Author : AIR FORCE CAMBRIDGE RESEARCH LABS L G HANSCOM FIELD MASS

Personal Author(s) : AVEN,M. ; WOODBURY,H.H.

Report Date : 28 JUN 1962

Pagination or Media Count : 1

Abstract : Using a radioactive tracer technique, it was demonstrated that by firing II-VI compounds in suitable liquid metals, Cu can be effectively extracted from these materials. Energy levels approximately 1 ev below the conduction band edge were found in CdS fired under high sulfur pressures. The presence of these levels appear to fix the Fermi level in semi-insulating CdS, and it has not been found possible to further lower the Fermi level either by very high pressure sulfur firing or the incorporation of the acceptor impurities Cu, Ag or Au. Liquid Cd firing of some high purity CdS samples has yielded a material showing an electron mobility maximum of 11,000 sq. cm/volt sec. Study of the growth habits of CdS on ZnTe showed that an epitaxial deposit of CdS can be obtained only on the (111) Zn faces of ZnTe. Reasons for this finding are discussed in terms of the thermal etch patterns and the bonding characteristics of II-VI compounds. Double injection and negative resistance behavior has been observed in ZnTe-CdS heterojunctions with wide compensated regions between the p and the n parts of the junction. A tentative band model has been proposed for the ZnTe-CdS junctions on the basis of this and other experimental findings. (Author)

Descriptors :   *SEMICONDUCTING FILMS, *SEMICONDUCTORS, *SINGLE CRYSTALS, ATOMIC ENERGY LEVELS, CADMIUM COMPOUNDS, COPPER, CRYSTAL STRUCTURE, ELECTRICAL PROPERTIES, EPITAXIAL GROWTH, GROUP II ELEMENTS, HALL EFFECT, IMPURITIES, SELENIDES, SOLID STATE PHYSICS, SULFIDES, TELLURIDES, TRANSPORT PROPERTIES, ZINC COMPOUNDS

Distribution Statement : APPROVED FOR PUBLIC RELEASE