Accession Number : AD0282636

Title :   BETA-SILICON CARBIDE AND ITS POTENTIAL FOR DEVICES

Corporate Author : STANFORD RESEARCH INST MENLO PARK CALIF

Personal Author(s) : NELSON,W.E. ; HALDEN,F.A.

Report Date : 15 AUG 1962

Pagination or Media Count : 1

Abstract : The first low-nitrogen beta-silicon carbide crystals were grown. Analysis revealed a tenfold decrease in nitrogen contamination compared with crystals grown previously. Electrical measurements of the low-nitrogen crystals (3.4 x 10 to the 17th power atoms/cc showed an order-of-magnitude increase in resistivity to 0.45 ohm-c . Successful crystal growth runs were made in pyrolytic graphite-coated UF-4S graphite crucibles and in purified, high-density graphite crucibles. (Author)

Descriptors :   *CARBIDES, *SILICON COMPOUNDS, *SINGLE CRYSTALS, CRUCIBLES, NITROGEN, SEMICONDUCTORS, VAPOR PLATING

Distribution Statement : APPROVED FOR PUBLIC RELEASE