Accession Number : AD0282987

Title :   RESEARCH AND DEVELOPMENT OF AN OPERATIONAL TRANSISTOR FROM INSB

Corporate Author : TEXAS INSTRUMENTS INC DALLAS

Report Date : MAR 1962

Pagination or Media Count : 1

Abstract : Considerable improvement in purity and perfection of Insb single crystals was achieved. Crystals grown during the latter part of the contract consstently showed an improvement by a factor of 2 in mobility over those grown earlier. Crystal pulling techniques were developed which allowed single crystals of InSb to be grown with dislocation densities of less than 1/100 sq m. Segregation coefficients of a number of impurities are reported. Bsic studies performed include the use of the photomagnetoelectric effect (PME) to study nonequilibrum transport in p-type InSb. The data suggests: that there is some energy dependence of scattering time which cannot be deduced from these measurements; that the small signal approximation may not be valid even for the lowest photon fluxes available; and that background radiation may be the dominant factor in determining diffusion length. The method used to build n-p-n diffused base, alloyed emitter InSb transistors is described in detal. (Author)

Descriptors :   *INDIUM COMPOUNDS, *INTERMETALLIC COMPOUNDS, *TRANSISTORS, CRYSTAL STRUCTURE, DEFORMATION, DIFFUSION, GROWTH(PHYSIOLOGY), IMPURITIES, MAGNETIC PROPERTIES, MANUFACTURING, MEASUREMENT, PHOTOELECTRIC EFFECT, PHOTOELECTRIC MATERIALS, PROCESSING, SCATTERING

Distribution Statement : APPROVED FOR PUBLIC RELEASE