Accession Number : AD0283036
Title : SEMICONDUCTOR THIN FILMS
Corporate Author : LEAR INC GRAND RAPIDS MICH
Personal Author(s) : AXELROD,J.M.
Report Date : 31 JUL 1962
Pagination or Media Count : 1
Abstract : Crystalline deposits were obtained consistently since the installation of a gravity operated lever for holding the substrates in contact with the substrate heater. Temperatures of substrates as measured by the inserted thermocouple were 60 - 90 degrees below the measured temperature of the substrate heater. GaAs films were peeled by the same method as were Ge films. Films were peeled by thermal shock onto filled epoxy resin but were not isolated from the resin. The possibility was explored of peeling a double layer consisting of metal on GaAs off onto plastic. N type GaAs was deposited by evaporation of a mixture of GaAs and selenium powders. An 0.02 ohm-cm n type film gave point contact diode action with a rectification ratio of 7.5 (0.6 ma/0.08 ma) at one volt. Large (1000 square mil) and small (4 square mil) areas of n type GaAs were deposited onto a Mg doped p type film on CaF2 and overlaid with slightly smaller areas of gold. Measurement between the gold and the p CaAs showed pure resistance for both large and small areas. Direct contact to the n GaAs showed diode (point contact) behavior.
Descriptors : *SEMICONDUCTORS, *THIN FILMS (STORAGE DEVICES), ARSENIDES, CADMIUM COMPOUNDS, CALCIUM COMPOUNDS, DIODES, ELECTRON MICROSCOPY, FLUORIDES, GALLIUM COMPOUNDS, GROWTH(PHYSIOLOGY), INTERMETALLIC COMPOUNDS, SINGLE CRYSTALS
Distribution Statement : APPROVED FOR PUBLIC RELEASE