Accession Number : AD0283053

Title :   THIN FILMS FORMED BY ELECTROCHEMICAL REACTIONS

Corporate Author : GENERAL TELEPHONE AND ELECTRONICS LABS INC BAYSIDE N Y

Personal Author(s) : BOWERMAN,E.R. ; CULP,J. WARREN ; HUDOCK,P.F.

Report Date : 30 JUN 1962

Pagination or Media Count : 1

Abstract : The preparation of several hundred thin-film Ta capacitors confirmed previous findings that the type of glass and the cleaning procedure used were necessary for obtaining high-quality capacitors. With the preparation of a large number of capacitors, data have been obtained on the uniformity of capacitance values. Improvements in both uniformity and electrical characteristics resulted from a reduction of the substrate temperature during tantalum sputtering, from the treatment of the sputtering mask and from spectroscopic monitoring for impurities in the glow discharge. The evaluation of electrical properties was extended to cover a range of frequencies and temperatures. The preparation of thin-film resistors by anodization of sputtered and vacuumevaporated Ta was accomplished. Resistance was reproducible to within 0.3% of the desired value. The films were evaluated for power dissipation, and the temperature coefficient of resistance was determined as a function of sheet resistivity and film thickness. (Author)

Descriptors :   *ELECTROCHEMISTRY, *THIN FILMS (STORAGE DEVICES), ALUMINUM, ANODES (ELECTROLYTIC CELL), CAPACITORS, CIRCUITS, MICROMETERS, NIOBIUM, OXIDATION, RESISTORS, TANTALUM, TITANIUM, TUNGSTEN, VACUUM APPARATUS, ZIRCONIUM

Distribution Statement : APPROVED FOR PUBLIC RELEASE